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DATA SHEET
BLF545 UHF push-pull power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability * Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT268 PIN 1 2 3 4 5 DESCRIPTION drain 1 gate 1 gate 2 drain 2 source
2 Top view 3
handbook, halfpage 1
BLF545
PIN CONFIGURATION
4
d g s g
5
d
MAM395
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 40 GP (dB) > 11 D (%) > 50
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS - - - up to Tmb = 25 C; total device; - both sections equally loaded -65 - MIN.
BLF545
MAX. 65 20 3.5 92 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS total device; both sections equally loaded total device; both sections equally loaded THERMAL RESISTANCE 1.9 K/W 0.25 K/W
102 handbook, halfpage ID (A)
MRA995
handbook, halfpage
120
MBK463
Ptot (W)
80
(1) (2)
(1)
10
(2)
40
1 1 10 VDS (V)
102
0 0 40 80 120 Th ( C) 160
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Short-time operation during mismatch. (2) Continuous operation. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 10 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 40 mA; VDS = 10 V ID = 1.2 A; VDS = 10 V ID = 1.2 A; VGS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 1 600 - - - - -
BLF545
TYP. MAX. UNIT - - - - 900 0.85 4.8 32 24 6.4 - 1 1 4 - 1.25 - - - - V mA A V mS A pF pF pF
handbook, halfpage
4
MDA504
handbook, halfpage
6
MDA505
T.C (mV/K) 2
ID (A) 4
0
2 -2
-4 10-2
10-1
0 1 ID (A) 10 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
handbook, halfpage
2
MDA506
handbook, halfpage
RDSon () 1.6
100 C (pF) 80
MDA507
1.2
60
0.8
40
Cis Cos
0.4
20
0 0 ID = 1.2 A; VGS = 10 V. 50 100 Tj (C) 150
0 0 VGS = 0; f = 1 MHz. 10 20 VDS (V) 30
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
handbook, halfpage
40
MDA508
Crs (pF) 30
20
10
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.25 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 IDQ (mA) 2 x 40 PL (W) 40 GP (dB) > 11 typ. 13
BLF545
D (%) > 50 typ. 60
Ruggedness in class-B operation The BLF545 is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
handbook, halfpage
24
MBK464
80 D (%)
handbook, halfpage
60
MBK465
Gp (dB) 16 Gp
PL (W) 40
60
D 8 40
20
0 0 20 40 PL (W) 60
20
0 0 2 4 6 PIN (W) 8
Class-B operation; VDS = 28 V; IDQ = 2 x 40 mA; ZL = 4.2 + j6.2 (per section); f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 x 40 mA; ZL = 4.2 + j6.2 (per section); f = 500 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values per section.
Fig.10 Load power as a function of input power, typical values per section.
October 1992
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
handbook, full pagewidth
R2
R7
+VD C12 C13
C8
C9
R8
L12 C14
50 input
,,, ,,,,, ,,,,,,,,, ,,, ,,,,, ,,,,,,,,, ,,, ,,,,, ,,,,,,,,,
R3 D.U.T. L13 L1 C3 L4 L6 L8 L10 L14 L18 L20 L22 C23 L24 L2 C1 R1 C2 L25 C5 C6 C7 C15 C19 C20 C21 C22 C24 L3 C4 L5 L7 L9 L11 L15 L19 L16 C16 L21 L23 L26 R4 C10 R9 C11 +VG R5 L17 C17 R6 C18 +VD
MBK461
50 output
BLF545
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
October 1992
7
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C2 C3, C4 C5, C7, C20, C22 C6 C8, C11, C12, C18 C9, C10, C14, C16 C13, C17 C15 C19 C21 C23, C24 L1, L3, L24, L26 L2, L25 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) stripline (note 2) semi-rigid cable (note 3) VALUE 5.1 pF 16 pF 1.8 to 10 pF 22 pF 100 nF 390 pF 10 F, 63 V 18 pF 13 pF 6.2 pF 10 pF 50 50 56 x 2.4 mm ext. dia. 2.2 mm ext. conductor length 56 mm 13.4 x 2 mm 9.6 x 2 mm 9 x 3 mm 6 x 3 mm DIMENSIONS
BLF545
CATALOGUE NO.
2222 809 05002
2222 852 47104
L4, L5 L6, L7 L8, L9 L10, L11 L12, L17 L13, L16
stripline (note 2) stripline (notes 2 and 4) stripline (note 2) stripline (note 2) grade 3B Ferroxcube RF choke 4 turns enamelled 1.2 mm copper wire stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) 0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 0.4 W metal film resistor 1 W metal film resistor
56 56 42 42 62 nH
4312 020 36642 length 7.6 mm int. dia. 5 mm leads 2 x 5 mm 8 x 2 mm 13 x 2 mm 18 x 2 mm 14 x 2 mm 2322 151 75118 2322 151 71003 2322 151 72054 2322 151 71009
L14, L15 L18, L19 L20, L21 L22, L23 R1 R2, R5 R3, R4 R6, R7 R8, R9 Notes
56 56 56 56 5.11 50 k 10 k 205 k 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. October 1992 8
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (r = 2.2); thickness 132 inch. 3. Semi-rigid cables L2 and L25 are soldered on to striplines L1 and L26. 4. Striplines L6 and L7 are used in series with a 42 stripline (11 x 3 mm).
82
handbook, full pagewidth
103
mounting screw
rivet strap 85
mounting screw
straps
R3
R7 R8 +VD R4 C8 C9 L12 C14 L13 L8 L10 L14 L18 C19 C15 L11 L15 L19 L16 C10 C11 C16 L17 R9 R6 +VD L20 C20 L21
R13
L1 + L2 R3 C1 C3 L4 R1 L5 C2 C4 C5 L6 L7 C6 C7 R4
C12 L24 + L25 C21, C22 L22 C23 L23 C24
L9
L3
C18
L26
R5
R17
MBK462
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm.
Fig.12 Component layout for 500 MHz class-B test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
handbook, halfpage
5
MDA509
handbook, halfpage
20
MDA510
Zi () 0
ri
ZL () 15
RL
-5 xi
10
XL
-10
5
-15
0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 2 x 40 mA; PL = 40 W.
Class-B operation; VDS = 28 V; IDQ = 2 x 40 mA; PL = 40 W.
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
30
MDA529
Gp (dB) 20
10
0 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 2 x 40 mA; PL = 40 W.
Fig.15 Power gain as a function of frequency, typical values per section.
October 1992
10
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF545
SOT268A
D
A F
5
U1 q H1 w2 M C C
B
c
1
4
H
U2
P
E
w1 M A B A
2
b e
3
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.91 4.19 0.193 0.165 b 1.66 1.39 c 0.13 0.07 D 12.96 12.44 0.510 0.490 E 6.48 6.22 e 6.45 F 2.04 1.77 H 17.02 16.00 H1 8.23 7.72 p 3.43 3.17 Q 2.67 2.41 q 18.42 U1 24.90 24.63 0.980 0.970 U2 6.61 6.35 0.260 0.250 w1 0.51 0.02 w2 1.02 0.04 w3 0.26 0.01
0.065 0.005 0.055 0.003
0.255 0.080 0.670 0.254 0.245 0.070 0.630
0.324 0.135 0.304 0.125
0.105 0.725 0.095
OUTLINE VERSION SOT268A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
11
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF545
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
12

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